Using advanced molecular beam epitaxy technology, EPIR can provide next-generation device-quality silicon-based composite substrates for HgCdTe deposition. Our products also feature standard device structure molecular beam epitaxy services for HgCdTe infrared detectors, including single- or multi-layered epitaxial structures with high purity, low precipitate densities, and ultralow contamination grown on silicon and cadmium zinc telluride wafers. EPIR services include a wide variety of epitaxial structures based on custom design specifications. EPIR will produce custom substrates of various sizes and compositions upon request. Some of the common structures available are listed below:

• Single- and multi-layered HgCdTe structures with user-defined specifications
• Full standard and custom layers for detectors and array fabrication
• HgCdTe materials grown by molecular beam epitaxy on Si and CdZnTe substrates
• Custom detector structures ready for implantation
• HgCdTe n- and p-type doped layers
• HgCdTe superlattice structures on CdZnTe and Si wafers